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SiR432DP

Vishay
Part Number SiR432DP
Manufacturer Vishay
Description N-Channel 100-V (D-S) MOSFET
Published Jan 21, 2017
Detailed Description N-Channel 100-V (D-S) MOSFET SiR432DP Vishay Siliconix PRODUCT SUMMARY VDS (V) 100 RDS(on) (Ω) 0.0306 at VGS = 10 V ...
Datasheet PDF File SiR432DP PDF File

SiR432DP
SiR432DP

Overview
N-Channel 100-V (D-S) MOSFET SiR432DP Vishay Siliconix PRODUCT SUMMARY VDS (V) 100 RDS(on) (Ω) 0.
0306 at VGS = 10 V 0.
0327 at VGS = 7.
5 V ID (A)a 28.
4 27.
5 Qg (Typ.
) 15.
5 nC PowerPAK SO-8 6.
15 mm D 8D 7 D 6 D 5 S 1S 5.
15 mm 2 S 3 G 4 Bottom View Ordering Information: SiR432DP-T1-GE3 (Lead (Pb)-free and Halogen-free) FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 % Rg Tested • 100 % UIS Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Primary Side Switch D G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current Continuous Source-Drain Diode Current Avalanche Current Single-Pulse Avalanche Energy Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)d, e TC = 25 °C TC = 70 °C TA = ...


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