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TC571000D-25

Toshiba
Part Number TC571000D-25
Manufacturer Toshiba
Description SILICON STACKED GATE MOS
Published Jan 22, 2017
Detailed Description TOSHIBA MOS MEMORY PRODUCT 1 MEGA BIT (131 ,072 WORD X 8 BIT) SILICON STACKED GATE MOS CMOS U.V. Erasable & Electricall...
Datasheet PDF File TC571000D-25 PDF File

TC571000D-25
TC571000D-25

Overview
TOSHIBA MOS MEMORY PRODUCT 1 MEGA BIT (131 ,072 WORD X 8 BIT) SILICON STACKED GATE MOS CMOS U.
V.
Erasable & Electrically Programmable Read Only Memory TC5710000-20, TC571 0000-25 TC571 0010-20, TC571 0010-25 IOESCRIPTIONj The TC57l000D/TC57l00lD is a 131,072 word x 8 bit CMOS ultraviolet light erasable and electrically programmable read only memory.
The TC57l000D is JEDEC standard pin configuration and the TC57l00lD is compatible with 28 pin It-! bit Mask ROM.
Both products are packed in 32 pin standard cerdip package.
TC57l000D/TC57l00lD is fabricated with the CMOS technology.
Advanced circuit techniques provide both high speed and low power features with a maximum operating current of 30mA/ 5.
0MHz and access time of 200ns/250ns.
The programming times of the TC57l000D/TC57l00lD except overhead times of EPROM programmer is only 14 seconds by using the high speed programming algorithm.
IFEATURESI • Peripheral circuit: CMOS Memory cell N-MOS • Fast access Time TC57l000D-20/T...


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