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SNN0630Q

KODENSHI KOREA
Part Number SNN0630Q
Manufacturer KODENSHI KOREA
Description Advanced N-Ch Trench MOSFET
Published Jan 24, 2017
Detailed Description SNN0630Q Advanced N-Ch Trench MOSFET Portable Equipment Application Features  Low On-state resistance: 28m at VGS = ...
Datasheet PDF File SNN0630Q PDF File

SNN0630Q
SNN0630Q

Overview
SNN0630Q Advanced N-Ch Trench MOSFET Portable Equipment Application Features  Low On-state resistance: 28m at VGS = 10V, ID = 2.
9A  Low gate charge: Qg= 4.
5nC (Typ.
)  High performance trench technology for extremely low RDS(on)  100% avalanche tested  Halogen free and RoHS compliant device Ordering Information Part Number Marking Package G D S SNN0630Q SNN0630 SOT-223 D SOT-223 Marking Information SNN0630 YWW Column 1: Device Code Column 2: Production Information e.
g.
) YWW -.
Y: Year Code -.
WW: Week Code Absolute maximum ratings (TC=25C unless otherwise noted) Characteristic Symbol Drain-source voltage Gate-source voltage Drain current (DC) * Drain current (Pulsed) ...


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