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THN6701B

AUK
Part Number THN6701B
Manufacturer AUK
Description SiGe NPN Transistor
Published Jan 30, 2017
Detailed Description Semiconductor □ Applications - VHF and UHF power amplifier □ Features - High power gain GP = 14 dB at VCE = 6 V, IC = 40...
Datasheet PDF File THN6701B PDF File

THN6701B
THN6701B

Overview
Semiconductor □ Applications - VHF and UHF power amplifier □ Features - High power gain GP = 14 dB at VCE = 6 V, IC = 400 mA, f = 465 MHz - High power POUT = 35 dBm(3W) at VCE = 6 V, ICQ = 50 mA, f = 465 MHz THN6701B SiGe NPN Transistor SOT-223 Unit in mm 6.
5 3.
0 4 3.
5 7.
0 12 2.
3 0.
7 4.
6 3 Pin Configuration 1.
Base 2.
Emitter 3.
Collector 4.
Emitter □ Absolute Maximum Ratings (TA = 25 ℃) Param eter Collector to Base Breakdown Voltage Collector to Emitter Breakdown Voltage Emitter to Base Breakdown Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature Sym bol BVCBO BVCEO BVEBO IC Ptot Tj Tstg Ratings 17 12 1.
5 1 3 150 -65 ~ 150 Unit V V V A W ...


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