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P1065AT

UNIKC
Part Number P1065AT
Manufacturer UNIKC
Description N-Channel MOSFET
Published Feb 1, 2017
Detailed Description P1065AT N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 650V 0.75Ω @VGS = 10V ID 10A TO-220 A...
Datasheet PDF File P1065AT PDF File

P1065AT
P1065AT

Overview
P1065AT N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 650V 0.
75Ω @VGS = 10V ID 10A TO-220 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 650 Gate-Source Voltage VGS ±30 Continuous Drain Current2 Pulsed Drain Current1, 2 Avalanche Energy3 TC = 25 °C TC = 100 °C L = 10mH ID IDM EAS 10 5 30 125 Power Dissipation TC = 25 °C TC = 100 °C PD 113 45 Operating Junction & Storage Temperature Range TJ, TSTG -55 to 150 UNITS V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Case 1Pulse width limited by maximum junction temperature.
2Limited only by maximum temperature allowed.
3VDD = 50V, L = 10mH, starting TJ = 25°C SYMBOL RqJC TYPICAL MAXIMUM UNITS 1.
1 °C / W Ver 1.
0 1 2012/4/16 P1065AT N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS MIN T...


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