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P4506BD

UNIKC
Part Number P4506BD
Manufacturer UNIKC
Description N-Channel Transistor
Published Feb 1, 2017
Detailed Description P4506BD N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 60V 45mΩ @VGS = 10V ID 22A TO-252 ABSO...
Datasheet PDF File P4506BD PDF File

P4506BD
P4506BD

Overview
P4506BD N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 60V 45mΩ @VGS = 10V ID 22A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 60 Gate-Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current1 TC = 25 °C TC = 100 °C ID IDM 22 18 80 Power Dissipation TC = 25 °C TC = 100 °C PD 42 27 Operating Junction & Storage Temperature Range Lead Temperature (1/16" from case for 10 sec.
) TJ, TSTG TL -55 to 150 275 UNITS V A W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Case Junction-to-Ambient 1Pulse width limited by maximum junction temperature.
SYMBOL RqJC RqJA TYPICAL MAXIMUM 3 75 UNITS °C / W Ver 1.
1 1 2013-3-25 P4506BD N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS MIN TYP MAX STATIC Drain-Source Breakdown Voltage Gate T...


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