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P6006BD

UNIKC
Part Number P6006BD
Manufacturer UNIKC
Description N-Channel Transistor
Published Feb 1, 2017
Detailed Description P6006BD N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 60V 60mΩ @VGS = 10V ID 21A TO-252 ABSO...
Datasheet PDF File P6006BD PDF File

P6006BD
P6006BD

Overview
P6006BD N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 60V 60mΩ @VGS = 10V ID 21A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 60 Gate-Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current1 TC = 25 °C TC = 100 °C ID IDM 21 17 85 Power Dissipation TC = 25 °C TC = 100 °C PD 50 32 Operating Junction & Storage Temperature Range TJ, TSTG -55 to 150 UNITS V A W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Case Junction-to-Ambient 1Pulse width limited by maximum junction temperature.
SYMBOL RqJC RqJA TYPICAL MAXIMUM 2.
5 75 UNITS °...


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