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P0925AD

UNIKC
Part Number P0925AD
Manufacturer UNIKC
Description N-Channel Transistor
Published Feb 1, 2017
Detailed Description P0925AD N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 250V 0.48Ω @VGS = 10V ID 9A TO-252 AB...
Datasheet PDF File P0925AD PDF File

P0925AD
P0925AD

Overview
P0925AD N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 250V 0.
48Ω @VGS = 10V ID 9A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate-Source Voltage VGS ±20 Continuous Drain Current2 Pulsed Drain Current1 Avalanche Current TC = 25 °C TC = 100 °C ID IDM IAS 9 5.
4 36 9 Avalanche Energy L =1.
8mH EAS 72 Power Dissipation TC = 25 °C TC = 100 °C Operating Junction & Storage Temperature Range PD Tj, Tstg 73 29 -55 to 150 UNITS V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Case 1Pulse width limited by maximum junction temperature.
2Limited only by maximum temperature allowed.
SYMBOL RqJC TYPICAL MAXIMUM UNITS 1.
7 °C / W REV 1.
2 1 2015/12/29 P0925AD N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNITS MIN TYP MAX STATIC Drain-Source Breakdown Voltage...


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