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P0920BD

UNIKC
Part Number P0920BD
Manufacturer UNIKC
Description N-Channel Transistor
Published Feb 1, 2017
Detailed Description P0920BD N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 200V 0.42Ω @VGS = 10V ID 9A TO-252 AB...
Datasheet PDF File P0920BD PDF File

P0920BD
P0920BD

Overview
P0920BD N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 200V 0.
42Ω @VGS = 10V ID 9A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate-Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current1 Avalanche Current TC = 25 °C TC = 100 °C ID IDM IAS 9 5 31 9 Avalanche Energy L =2.
8mH EAS 113 Power Dissipation TC = 25 °C TC = 100 °C Operating Junction & Storage Temperature Range PD Tj, Tstg 62.
5 25 -55 to 150 UNITS V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Case 1Pulse width limited by maximum junction temperature.
SYMBOL RqJC TYPICAL MAXIMUM UNITS...


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