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P2610ADG

UNIKC
Part Number P2610ADG
Manufacturer UNIKC
Description N-Channel Transistor
Published Feb 1, 2017
Detailed Description P2610ADG N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 100V 26mΩ @VGS = 10V ID 50A TO-252 A...
Datasheet PDF File P2610ADG PDF File

P2610ADG
P2610ADG

Overview
P2610ADG N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 100V 26mΩ @VGS = 10V ID 50A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 100 Gate-Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current1 TC = 25 °C TC = 100 °C ID IDM 50 35.
5 150 Avalanche Current IAS 53 Avalanche Energy L = 0.
1mH EAS 140 Power Dissipation TC = 25 °C TC = 100 °C PD 128 51 Operating Junction & Storage Temperature Range TJ, TSTG -55 to 150 UNITS V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Case Junction-to-Ambient 1Pulse width limited by maximum junction temperature.
SYMBOL RqJC RqJA TYPICAL MAXIMUM 0.
97 62.
5 UNITS °C / W Ver 1.
1 1 2013-3-22 P2610ADG N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS MIN TYP MAX STATIC Drain-So...


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