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P0260EI

UNIKC
Part Number P0260EI
Manufacturer UNIKC
Description N-Channel MOSFET
Published Feb 2, 2017
Detailed Description P0260EI N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 600V 4.4Ω @VGS = 10V ID 2A TO-251 ABS...
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P0260EI
P0260EI

Overview
P0260EI N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 600V 4.
4Ω @VGS = 10V ID 2A TO-251 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 600 Gate-Source Voltage VGS ±30 Continuous Drain Current2 Pulsed Drain Current1,2 Avalanche Current3 Avalanche Energy3 TC = 25 °C TC = 100 °C ID IDM IAS EAS 2 1.
4 8 2 20 Power Dissipation TC = 25 °C TC = 100 °C PD 56 22 Operating Junction & Storage Temperature Range TJ, TSTG -55 to 150 UNITS V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Case Junction-to-Ambient 1Pulse width limited by maximum junction temperature.
2Limited only by maximum temperature allowed 3VDD = 50V , L = 10mH ,starting TJ = 25˚C SYMBOL RqJC RqJA TYPICAL MAXIMUM 2.
2 62.
5 UNITS °C / W REV 1.
1 1 2015/7/14 P0260EI N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAME...


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