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PK615BM6

UNIKC
Part Number PK615BM6
Manufacturer UNIKC
Description N-Channel MOSFET
Published Feb 2, 2017
Detailed Description PK615BM6 N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 150V 2.6Ω @VGS = 10V ID 0.37A SOT-23-...
Datasheet PDF File PK615BM6 PDF File

PK615BM6
PK615BM6

Overview
PK615BM6 N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 150V 2.
6Ω @VGS = 10V ID 0.
37A SOT-23-6 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 150 Gate-Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current1 TA = 25 °C TA = 70 °C ID IDM 0.
37 0.
29 2.
2 Power Dissipation TA = 25 °C TA = 70 °C PD 0.
83 0.
53 Junction & Storage Temperature Range TJ, TSTG -55 to 150 UNITS V V A W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Ambient 1 limited by maximum junction temperature.
SYMBOL RqJA TYPICAL MAXIMUM UNITS 150 °C / W Ver 1.
0 1 2012/6/26 PK615BM6 N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS MIN TYP MAX STATIC Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage V(BR)DSS VGS(th) IGSS Zero Gate Voltage Drai...


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