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PM550BA

Part Number	PM550BA
Manufacturer	UNIKC
Description	N-Channel MOSFET
Published	Feb 2, 2017
Detailed Description	PM550BA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 250V 3Ω @VGS = 10V ID 0.4A SOT-23 ABS...
Datasheet	PM550BA PDF File

Overview

PM550BA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 250V 3Ω @VGS = 10V ID 0.
4A SOT-23 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 250 Gate-Source Voltage VGS ±20 Continuous Drain Current TA = 25 °C TA = 70 °C ID 0.
4 0.
3 Pulsed Drain Current1 IDM 1.
6 Power Dissipation TA = 25 °C TA = 70 °C PD 0.
75 0.
5 Operating Junction & Storage Temperature Range TJ, TSTG -55 to 150 UNITS V A W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Ambient 1Pulse width limited by maximum junction temperature.
SYMBOL RqJA TYPICAL MAXIMUM UNITS 166 °C / W REV 1.
0 1 2014/8/29 PM550BA N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNITS MIN TYP MAX STATIC Drain-Source Breakdown Voltage V(BR)DSS Gate Threshold Voltage VGS(th) VGS = 0V, ID = 250mA VDS = ...

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