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PA606BMG

Part Number	PA606BMG
Manufacturer	UNIKC
Description	N-Channel MOSFET
Published	Feb 2, 2017
Detailed Description	PA606BMG N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 55V 180mΩ @VGS = 10V ID 1.6A SOT-23 A...
Datasheet	PA606BMG PDF File

Overview

PA606BMG N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 55V 180mΩ @VGS = 10V ID 1.
6A SOT-23 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 55 Gate-Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current1 TA = 25 °C TA = 70 °C ID IDM 1.
6 1 11 Avalanche Current IAS 11 Avalanche Energy L = 0.
1mH EAS 6 Power Dissipation TA = 25 °C TA = 70 °C PD 0.
8 0.
3 Operating Junction & Storage Temperature Range TJ, TSTG -55 to 150 UNITS V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Ambient 1Pulse width limited by maximum junction temperature.
SYMBOL RqJA TYPICAL MAXIMUM UNITS 140 °C / W Ver 1.
0 1 2012/4/12 PA606BMG N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS MIN TYP MAX STATIC Drain-Source Breakdown Voltage Gate Threshol...

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