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PM505BA

UNIKC
Part Number PM505BA
Manufacturer UNIKC
Description P-Channel MOSFET
Published Feb 2, 2017
Detailed Description PM505BA P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) -20V 40mΩ @VGS = -4.5V ID -4A SOT-23(S...
Datasheet PDF File PM505BA PDF File

PM505BA
PM505BA

Overview
PM505BA P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) -20V 40mΩ @VGS = -4.
5V ID -4A SOT-23(S) ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate-Source Voltage VGS ±8 Continuous Drain Current Pulsed Drain Current1 TA = 25 °C TA = 70 °C ID IDM -4 -3 -21 Power Dissipation TA = 25 °C TA = 70 °C PD 0.
9 0.
6 Operating Junction & Storage Temperature Range Tj, Tstg -55 to 150 UNITS V A W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL Junction-to-Ambient2 RqJA 1Pulse width limited by maximum junction temperature.
2The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz.
Copper.
MAXIMUM UNITS 126 °C / W REV 1.
0 1 2015/7/3 PM505BA P-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNITS MIN TYP MAX STATIC Drain-Source Breakdown Voltage Gate Th...


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