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PM513BA

UNIKC
Part Number PM513BA
Manufacturer UNIKC
Description P-Channel MOSFET
Published Feb 2, 2017
Detailed Description PM513BA P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) -20V 100mΩ @VGS = -4.5V ID -3A SOT-23 ...
Datasheet PDF File PM513BA PDF File

PM513BA
PM513BA

Overview
PM513BA P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) -20V 100mΩ @VGS = -4.
5V ID -3A SOT-23 (S) ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS -20 Gate-Source Voltage VGS ±8 Continuous Drain Current Pulsed Drain Current1 TA = 25 °C TA = 70 °C ID IDM -3 -2.
4 -20 Power Dissipation TA = 25 °C TA = 70 °C PD 0.
9 0.
6 Junction & Storage Temperature Range TJ, TSTG -55 to 150 UNITS V V A W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM Junction-to-Ambient2 RqJA 130 1limited by maximum junction temperature.
2The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz Copper.
in a still air environment with TA=25°C UNITS °C / W Ver 1.
0 1 2012/12/28 PM513BA P-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS MIN...


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