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P06P03LCG

UNIKC
Part Number P06P03LCG
Manufacturer UNIKC
Description P-Channel MOSFET
Published Feb 3, 2017
Detailed Description P06P03LCG P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) -30V 45mΩ @VGS = -10V ID -3.5A SOT-8...
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P06P03LCG
P06P03LCG

Overview
P06P03LCG P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) -30V 45mΩ @VGS = -10V ID -3.
5A SOT-89 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS -30 Gate-Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current1 TA = 25 °C TA = 70 °C ID IDM -3.
5 -2.
8 -20 Avalanche Current IAS -19 Avalanche Energy L = 0.
1mH EAS 18 Power Dissipation TA = 25 °C TA = 70 °C PD 0.
78 0.
5 Operating Junction & Storage Temperature Range TJ, TSTG -55 to 150 UNITS V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Case Junction-to-Ambient 1Pulse width limited by maximum junction temperature.
2Duty cycle  1%.
SYMBOL RqJC RqJA TYPICAL MAXIMUM 18 160 UNITS °C / W Ver 1.
0 1 2012/4/12 P06P03LCG P-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS MIN T...


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