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PZP003BYB

Part Number	PZP003BYB
Manufacturer	UNIKC
Description	N-Channel MOSFET
Published	Feb 3, 2017
Detailed Description	PZP003BYB N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 30V 6Ω @VGS = 4V ID 110mA SOT-523 AB...
Datasheet	PZP003BYB PDF File

Overview

PZP003BYB N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 30V 6Ω @VGS = 4V ID 110mA SOT-523 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate-Source Voltage VGS ±20 Continuous Drain Current1 Pulsed Drain Current2 TA = 25 °C TA = 100 °C ID IDM 110 70 400 Avalanche Current IAS 300 Avalanche Energy L = 0.
1mH EAS 0.
5 Power Dissipation TA = 25 °C TA = 100 °C PD 150 60 Operating Junction & Storage Temperature Range TJ, TSTG -55 to 150 UNITS V mA mJ mW °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Ambient 1Limited by maximum junction temperature.
2Limited by package.
SYMBOL RqJ...

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PZP003BYB N-Channel MOSFET - UNIKC

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