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P1210BVA

UNIKC
Part Number P1210BVA
Manufacturer UNIKC
Description N-Channel MOSFET
Published Feb 3, 2017
Detailed Description P1210BVA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 100V 12mΩ @VGS = 10V ID 8.7A SOP-8 A...
Datasheet PDF File P1210BVA PDF File

P1210BVA
P1210BVA

Overview
P1210BVA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 100V 12mΩ @VGS = 10V ID 8.
7A SOP-8 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 100 Gate-Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current1 TA = 25 °C TA = 70 °C ID IDM 8.
7 6.
9 32 Avalanche Current IAS 15 Avalanche Energy L = 1mH EAS 112 Power Dissipation TA= 25 °C TA =70 °C PD 2 1.
3 Junction & Storage Temperature Range Tj, Tstg -55 to 150 UNITS V V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM Junction-to-Ambient2 RqJA 62 Junction-to-Case RqJC 25 1Pulse width limited by maximum junction temperature.
2The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz.
Copper, in a still air environment with TA =25°C.
UNITS °C / W REV 1.
0 1 2016/12/27 P1210BVA N-Channel Enhancement Mode MOSFET ELECTRICAL CHARA...


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