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P3710AV

UNIKC
Part Number P3710AV
Manufacturer UNIKC
Description N-Channel MOSFET
Published Feb 3, 2017
Detailed Description P3710AV N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 100V 37mΩ @VGS = 10V ID 5.5A SOP- 08 ...
Datasheet PDF File P3710AV PDF File

P3710AV
P3710AV

Overview
P3710AV N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 100V 37mΩ @VGS = 10V ID 5.
5A SOP- 08 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 100 Gate-Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current1 TA = 25 °C TA = 70 °C ID IDM 5.
5 4.
4 47 Avalanche Current IAS 47 Avalanche Energy L = 0.
1mH EAS 113 Power Dissipation TA = 25 °C TA = 70 °C PD 2.
5 1 Junction & Storage Temperature Range TJ, TSTG -55 to 150 UNITS V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Ambient 1Pulse width limited by maximum junction temperature.
SYMBOL RqJA TYPICAL MAXIMUM UNITS 50 °C / W Ver 1.
0 1 2012/4/13 P3710AV N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS MIN TYP MAX STATIC Drain-Source Breakdown Voltage Gate Threshold Voltag...


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