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P3304EV

UNIKC
Part Number P3304EV
Manufacturer UNIKC
Description P-Channel MOSFET
Published Feb 3, 2017
Detailed Description P3304EV P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) -40V 33mΩ @VGS = -10V ID -7A SOP- 08 ...
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P3304EV
P3304EV

Overview
P3304EV P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) -40V 33mΩ @VGS = -10V ID -7A SOP- 08 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS -40 Gate-Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current1 TA = 25 °C TA = 70 °C ID IDM -7 -6 -30 Power Dissipation TA = 25 °C TA = 70 °C PD 2.
5 1.
3 Operating Junction & Storage Temperature Range TJ, TSTG -55 to 150 UNITS V A W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Ambient 1Pulse width limited by maximum junction temperature.
2Duty cycle  1% SYMBOL RqJA TYPICAL MAXIMUM UNITS 50 °C / W Ver 1.
0 1 2012/4/13 P3304EV P-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS MIN TYP MAX STATIC Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage V(BR)DSS VGS(th) I...


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