DatasheetsPDF.com

PB521BX

Part Number	PB521BX
Manufacturer	UNIKC
Description	P-Channel MOSFET
Published	Feb 3, 2017
Detailed Description	PB521BX P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) -20V 21mΩ @VGS = -4.5V ID -7.4A PDFN 2...
Datasheet	PB521BX PDF File

Overview

PB521BX P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) -20V 21mΩ @VGS = -4.
5V ID -7.
4A PDFN 2X2S ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS -20 Gate-Source Voltage VGS ±8 Continuous Drain Current Pulsed Drain Current1 TA = 25 °C TA= 70 °C ID IDM -8 -6.
4 29 Power Dissipation TA= 25 °C TA= 70°C PD 2.
1 1.
4 Operating Junction & Storage Temperature Range Tj, Tstg -55 to 150 UNITS V A W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL Junction-to-Ambient2 RqJA 1Pulse width limited by maximum junction temperature.
2The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz.
Coppe.
MAXIMUM 57 UNITS °C / W REV 1.
2 1 2014/8/15 PB521BX P-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNITS MIN TYP MAX STATIC Drai...

Similar Datasheet

PB521BX P-Channel MOSFET - UNIKC

@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)