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PV548BA

UNIKC
Part Number PV548BA
Manufacturer UNIKC
Description MOSFET
Published Feb 3, 2017
Detailed Description PV548BA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 30V 5.6mΩ @VGS = 10V ID 14A SOP-8 ABSO...
Datasheet PDF File PV548BA PDF File

PV548BA
PV548BA

Overview
PV548BA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 30V 5.
6mΩ @VGS = 10V ID 14A SOP-8 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current1 TA = 25 °C TA = 70 °C ID IDM 14 11 150 Avalanche Current IAS 36.
3 Avalanche Energy L =0.
1mH EAS 65.
9 Power Dissipation TA= 25 °C TA =70 °C PD 1.
9 1.
2 Junction & Storage Temperature Range Tj, Tstg -55 to 150 UNITS V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM Junction-to-Ambient RqJA 65 Junction-to-Case RqJC 25 1Pulse width limited by maximum junction temperature.
2The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz.
Copper, in a still air environment with TA =25°C.
UNITS °C / W REV 1.
0 1 2014/8/27 PV548BA N-Channel Enhancement Mode MOSFET ELECTRICAL CHARA...


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