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PV600BA

UNIKC
Part Number PV600BA
Manufacturer UNIKC
Description MOSFET
Published Feb 3, 2017
Detailed Description PV600BA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 30V 10.8mΩ @VGS = 10V ID 10A SOP-8 ABS...
Datasheet PDF File PV600BA PDF File

PV600BA
PV600BA

Overview
PV600BA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 30V 10.
8mΩ @VGS = 10V ID 10A SOP-8 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current1 TA = 25 °C TA = 70 °C ID IDM 10 8 40 Avalanche Current IAS 17.
6 Avalanche Energy L =0.
1mH EAS 15.
5 Power Dissipation TA= 25 °C TA =70 °C PD 1.
95 1.
25 Junction & Storage Temperature Range Tj, Tstg -55 to 150 UNITS V V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM Junction-to-Ambient RqJA 64 Junction-to-Case RqJC...


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