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P1603BEX

UNIKC
Part Number P1603BEX
Manufacturer UNIKC
Description MOSFET
Published Feb 3, 2017
Detailed Description P1603BEX N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 30V 16mΩ @VGS = 10V ID3 24A PDFN 2X2S ...
Datasheet PDF File P1603BEX PDF File

P1603BEX
P1603BEX


Overview
P1603BEX N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 30V 16mΩ @VGS = 10V ID3 24A PDFN 2X2S ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ±20 TC = 25 °C 24 Continuous Drain Current3 TC = 100 °C TA = 25 °C ID 15 8 Pulsed Drain Current1 TA= 70 °C IDM 6.
3 60 Avalanche Current IAS 20.
5 Avalanche Energy L = 0.
1mH EAS 21 TC = 25 °C 15 Power Dissipation TC = 100 °C TA = 25 °C PD 6 1.
7 TA = 70 °C 1 Operating Junction & Storage Temperature Range TJ, Tstg -55 to 150 UNITS V V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL Junction-to-Ambient2 RqJA Junction-to-Case RqJC 1Pulse width limited by maximum junction temperature.
2The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz.
Copper.
3Package limitation current is 18A.
MAXIMUM 73 8 UNITS °C / W REV 1...


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