DatasheetsPDF.com

PB606BA

UNIKC
Part Number PB606BA
Manufacturer UNIKC
Description MOSFET
Published Feb 3, 2017
Detailed Description PB606BA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 30V 16mΩ @VGS = 10V ID 7.8A PDFN 2X2S ...
Datasheet PDF File PB606BA PDF File

PB606BA
PB606BA

Overview
PB606BA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 30V 16mΩ @VGS = 10V ID 7.
8A PDFN 2X2S 100%RG TEST 100%UIL TEST ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current1 TA = 25 °C TA= 70 °C ID IDM 7.
8 6.
2 21 Avalanche Current IAS 12.
8 Avalanche Energy L = 0.
1 mH EAS 8.
2 Power Dissipation TA= 25 °C TA= 70°C PD 1.
5 1 Operating Junction & Storage Temperature Range Tj, Tstg -55 to 150 UNITS V V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL Junction-to-Ambient2 RqJA 1Pulse width limited by maximum junction temperature.
2The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz.
Coppe.
MAXIMUM 80 UNITS °C / W REV 1.
0 1 2014/12/17 PB606BA N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)