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PE618DT

UNIKC
Part Number PE618DT
Manufacturer UNIKC
Description MOSFET
Published Feb 4, 2017
Detailed Description PE618DT Dual N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS Q2 30V RDS(ON) 7mΩ @VGS = 10V Q1 30V 16mΩ @...
Datasheet PDF File PE618DT PDF File

PE618DT
PE618DT

Overview
PE618DT Dual N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS Q2 30V RDS(ON) 7mΩ @VGS = 10V Q1 30V 16mΩ @VGS = 10V ID 39A 23A PDFN 3X3S ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Q2 Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ±20 Continuous Drain Current3 Pulsed Drain Current1 TC = 25 °C TC = 100 °C ID IDM 39 25 50 Continuous Drain Current TA = 25 °C TA = 70 °C ID 12 10 Avalanche Current IAS 23 Avalanche Energy L = 0.
1mH EAS 26 Power Dissipation TC = 25 °C TC = 100 °C PD 20 8.
3 Power Dissipation TA = 25 °C TA = 70 °C PD 2.
2 1.
.
4 Operating Junction & Storage Temperature Range TJ, Tstg ...


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