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PE552BA

UNIKC
Part Number PE552BA
Manufacturer UNIKC
Description MOSFET
Published Feb 4, 2017
Detailed Description PE552BA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 20V 5mΩ @VGS = 4.5V ID3 47A PDFN 3X3P ...
Datasheet PDF File PE552BA PDF File

PE552BA
PE552BA


Overview
PE552BA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 20V 5mΩ @VGS = 4.
5V ID3 47A PDFN 3X3P ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 20 Gate-Source Voltage VGS ±8 Tc = 25 °C 47 Continuous Drain Current3 Tc = 100 °C TA = 25 °C ID 30 15 Pulsed Drain Current1 TA = 70 °C IDM 12 70 Avalanche Current IAS 38.
6 Avalanche Energy L =0.
1mH EAS 74.
6 TC = 25 °C 19 Power Dissipation TC = 100 °C TA = 25 °C PD 7 2 TA = 70 °C 1.
3 Operating Junction & Storage Temperature Range TJ, Tstg -55 to 150 UNITS V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM Junction-to-Ambient2 RqJA 60 Junction-to-Case RqJC 6.
5 1Pulse width limited by maximum junction temperature.
2The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz.
Copper, in a still air environment with TA =25°C.
3Package limi...


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