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PE632BA

UNIKC
Part Number PE632BA
Manufacturer UNIKC
Description MOSFET
Published Feb 4, 2017
Detailed Description PE632BA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 30V 4.5mΩ @VGS = 10V ID 53A PDFN 3X3P ...
Datasheet PDF File PE632BA PDF File

PE632BA
PE632BA

Overview
PE632BA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 30V 4.
5mΩ @VGS = 10V ID 53A PDFN 3X3P ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ±20 Tc = 25 °C 53 Continuous Drain Current2 Tc = 100 °C TA = 25 °C ID 33 15 Pulsed Drain Current1 TA= 70 °C IDM 12 100 Avalanche Current IAS 37.
5 Avalanche Energy L =0.
1mH EAS 70 TC = 25 °C 22.
7 Power Dissipation TC = 100 °C TA = 25 °C PD 9 2 TA = 70 °C 1.
3 Operating Junction & Storage Temperature Range TJ, Tstg -55 to 150 UNITS V V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANC...


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