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PE6H6BA

UNIKC
Part Number PE6H6BA
Manufacturer UNIKC
Description MOSFET
Published Feb 4, 2017
Detailed Description PE6H6BA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 30V 7.8mΩ @VGS = 10V ID 36A PDFN 3X3P ...
Datasheet PDF File PE6H6BA PDF File

PE6H6BA
PE6H6BA

Overview
PE6H6BA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 30V 7.
8mΩ @VGS = 10V ID 36A PDFN 3X3P ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ±20 Continuous Drain Current4 Pulsed Drain Current1 TC = 25 °C TC = 100 °C ID IDM 36 23 100 Continuous Drain Current TA = 25 °C TA = 70 °C ID 14 11 Avalanche Current IAS 22 Avalanche Energy L =0.
1mH EAS 24 Power Dissipation Power Dissipation3 TC = 25 °C TC = 100 °C TA = 25 °C TA = 70 °C PD 20 8.
3 3.
1 2 Operating Junction & Storage Temperature Range TJ, Tstg -55 to 150 UNITS V A mJ W °C REV 1.
0 1 2016/12/19 PE6H6BA N-Channel Enhancement Mode MOSFET THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM Junction-to-Ambient2 t ≦10s RqJA 40 Junction-to-Ambient2 Steady-State RqJA 68 Junction-to-Case Steady-State RqJC 6 1Pulse width limited by maxi...


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