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PK6B0SA

UNIKC
Part Number PK6B0SA
Manufacturer UNIKC
Description MOSFET
Published Feb 6, 2017
Detailed Description PK6B0SA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 30V 5mΩ @VGS = 10V ID 56A PDFN 5X6P AB...
Datasheet PDF File PK6B0SA PDF File

PK6B0SA
PK6B0SA

Overview
PK6B0SA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 30V 5mΩ @VGS = 10V ID 56A PDFN 5X6P ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ±20 Continuous Drain Current3 Pulsed Drain Current1 TC = 25 °C TC = 100 °C ID IDM 56 35 100 Continuous Drain Current TA = 25 °C TA= 70 °C ID 20 16 Avalanche Current IAS 26 Avalanche Energy L =0.
1mH EAS 33.
8 Power Dissipation TC = 25 °C TC = 100 °C PD 31 12 Power Dissipation TA = 25 °C TA = 70 °C PD 4 2.
6 Operating Junction & Storage Temperature Range TJ, Tstg -55 to 150 UNITS V V A mJ W W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM Junction-to-Ambient2 Junction-to-Ambient2 t ≦10s Steady-State RqJA RqJA 30 58 Junction-to-Case Steady-State RqJC 4 1Pulse width limited by maximum junction temperature.
2The value of RθJA is measured with...


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