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P0165AI

UNIKC
Part Number P0165AI
Manufacturer UNIKC
Description MOSFET
Published Feb 6, 2017
Detailed Description P0165AI N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 650V 14Ω @VGS = 10V ID 1A TO-251 ABSO...
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P0165AI
P0165AI

Overview
P0165AI N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 650V 14Ω @VGS = 10V ID 1A TO-251 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 650 Gate-Source Voltage VGS ±30 Continuous Drain Current2 Pulsed Drain Current1, 2 Avalanche Current3 Avalanche Energy3 TC = 25 °C TC = 100 °C L = 10mH ID IDM IAS EAS 1 0.
6 3 1.
1 5.
8 Power DissipationA TC = 25 °C TC = 100 °C PD 27.
6 11 Operating Junction & Storage Temperature Range TJ, TSTG -55 to 150 UNITS V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Case Junction-to-Ambient 1Pulse width limited by maximum junction temperature.
2Limited only by maximum temperature allowed.
3VDD = 50V , Starting TJ = 25 °C SYMBOL RqJC RqJA TYPICAL MAXIMUM 4.
53 110 UNITS °C / W Ver 1.
0 1 2012/4/16 P0165AI N-Channel Enhancement Mode MOSFET PARAMETER SYMBOL TEST CONDITIONS LIMITS MIN TYP MAX STATIC D...


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