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P082ABD8

UNIKC
Part Number P082ABD8
Manufacturer UNIKC
Description MOSFET
Published Feb 6, 2017
Detailed Description P082ABD8 N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 25V 8mΩ @VGS = 10V ID 52A TO-252 ABSO...
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P082ABD8
P082ABD8

Overview
P082ABD8 N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 25V 8mΩ @VGS = 10V ID 52A TO-252 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate-Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current1 TC= 25 °C TC= 100 °C ID IDM 52 33 130 Avalanche Current IAS 23 Avalanche Energy L=0.
1mH EAS 76 Power Dissipation TC= 25 °C TC= 100°C PD 36 14 Operating Junction & Storage Temperature Range Lead Temperature (1/16” from case for 10 sec.
) Tj, Tstg TL -55 to 150 275 UNITS V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Ambient Junction-to-Case 1Pulse width limite...


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