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EM47EM3288MBA

Part Number	EM47EM3288MBA
Manufacturer	Eorex
Description	4Gb Double DATA RATE-3 SDRAM
Published	Feb 6, 2017
Detailed Description	EM47EM3288MBA 8Gb (32M×8Bank×32) Double DATA RATE 3 Stack SDRAM Features • VDD/VDDQ = 1.35V -0.065/+0.1V. • Backward co...
Datasheet	EM47EM3288MBA PDF File

Overview

EM47EM3288MBA 8Gb (32M×8Bank×32) Double DATA RATE 3 Stack SDRAM Features • VDD/VDDQ = 1.
35V -0.
065/+0.
1V.
• Backward compatible to VDD = VDDQ = 1.
5V ±0.
075V.
Supports DDR3L devices to be backward compatible in 1.
5V applications.
• Fully differential clock inputs (CK, /CK) operation.
• Eight Banks • Posted CAS by programmable additive latency • Bust length: 4 with Burst Chop (BC) and 8.
• CAS Write Latency (CWL): 5,6,7,8 • CAS Latency (CL): 5,6,7,8,9,10 • Write Latency (WL) =Read Latency (RL) -1.
• Bi-directional Differential Data Strobe (DQS).
• Data inputs on DQS centers when write.
• Data outputs on DQS, /DQS edges when read.
• On chip DLL align DQ, DQS and /DQS transition with CK transiti...

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EM47EM3288MBA 4Gb Double DATA RATE-3 SDRAM - Eorex

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