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P1703BDG

UNIKC
Part Number P1703BDG
Manufacturer UNIKC
Description N-Channel MOSFET
Published Feb 6, 2017
Detailed Description P1703BDG N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 25V 16mΩ @VGS = 10V ID 42A TO-252 ABS...
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P1703BDG
P1703BDG

Overview
P1703BDG N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 25V 16mΩ @VGS = 10V ID 42A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate-Source Voltage VGS ±20 Continuous Drain Current2 Pulsed Drain Current1 TC= 25 °C TC= 100 °C ID IDM 42 26 168 Avalanche Current IAS 27 Avalanche Energy L=0.
1mH EAS 38 Power Dissipation TC= 25 °C TC= 100°C PD 50 20 Operating Junction & Storage Temperature Range Tj, Tstg -55 to 150 UNITS V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Case 1Pulse width limited by maximum junction temperature.
2Package limitation current is 39A.
SYMBOL RqJC TYPICAL MAXIMUM UNITS 2.
5 °C / W REV 1.
0 1 2014/5/8 P1703BDG N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNITS MIN TYP MAX STATIC Drain-Source Breakdown Voltage Gate Threshol...


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