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P2504EDG

UNIKC
Part Number P2504EDG
Manufacturer UNIKC
Description P-Channel MOSFET
Published Feb 6, 2017
Detailed Description P2504EDG P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) -40V 25.8mΩ @VGS = -10V ID -18A TO-25...
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P2504EDG
P2504EDG

Overview
P2504EDG P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) -40V 25.
8mΩ @VGS = -10V ID -18A TO-252 100% UIS tested 100% Rg tested ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage Gate-Source Voltage VDS -40 V VGS ±20 Continuous Drain Current Pulsed Drain Current1 TC = 25 °C TC = 70 °C ID IDM -18 -13.
5 -40 A Power Dissipation TC = 25 °C TC = 70 °C PD 42 W 27 Operating Junction & Storage Temperature Range TJ, TSTG -55 to 150 °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Case Junction-to-Ambient 1Pulse width limited by maximum junction temperature.
SYMBOL RqJC RqJA TYPICAL MAXIMUM 3 75 UNITS °C / W REV 1.
2 1 2016/5/11 P2504EDG P-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS MIN TYP MAX STATIC Drain-Source Breakdown Voltage Gate Threshol...


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