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P3004BD

UNIKC
Part Number P3004BD
Manufacturer UNIKC
Description N-Channel MOSFET
Published Feb 6, 2017
Detailed Description P3004BD N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 40V 30mΩ @VGS = 10V ID 29A TO-252 ABSO...
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P3004BD
P3004BD

Overview
P3004BD N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 40V 30mΩ @VGS = 10V ID 29A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate-Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current1 TC = 25 °C TC = 70 °C ID IDM 29 23 80 Avalanche Current IAS 19 Avalanche Energy L = 0.
1mH EAS 19 Power Dissipation TC = 25 °C TC = 70 °C PD 42 27 Operating Junction & Storage Temperature Range TJ, TSTG -55 to 150 100% Rg tested 100% UIS tested UNITS V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Case Junction-to-Ambient 1Pulse width limited by maximum junction temperature.
SYMBOL RqJC RqJA TYPICAL MAXIMUM 3 62.
5 UNITS °C / W Ver 1.
0 1 2013-4-11 P3004BD N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS MIN TYP MAX STATIC Drain-Source Breakdown...


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