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P6004ED

UNIKC
Part Number P6004ED
Manufacturer UNIKC
Description P-Channel MOSFET
Published Feb 7, 2017
Detailed Description P6004ED P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) -40V 60mΩ @VGS = -10V ID -20A TO-252 ...
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P6004ED
P6004ED

Overview
P6004ED P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) -40V 60mΩ @VGS = -10V ID -20A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS -40 Gate-Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current1 TC = 25 °C TC = 100 °C ID IDM -20 -16 -80 Avalanche Current IAS -20 Avalanche Energy L = 0.
1 mH EAS 19.
5 Power Dissipation TC = 25 °C TC = 100 °C PD 42 27 Operating Junction & Storage Temperature Range TJ, TSTG -55 to 150 UNITS V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Case Junction-to-Ambient 1Pulse width limited by maximum junction temperature.
SYMBOL RqJC RqJA TYPICAL MAXIMUM 3 75 UNITS °C / W Ver 1.
1 1 2013-3-25 P6004ED P-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS MIN TYP MAX STATIC Drain-Sourc...


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