DatasheetsPDF.com

P9515BDE

UNIKC
Part Number P9515BDE
Manufacturer UNIKC
Description N-Channel MOSFET
Published Feb 7, 2017
Detailed Description P9515BDE N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 150V 108mΩ @VGS = 10V ID 17A TO-252 ...
Datasheet PDF File P9515BDE PDF File

P9515BDE
P9515BDE

Overview
P9515BDE N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 150V 108mΩ @VGS = 10V ID 17A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 150 Gate-Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current1 TC = 25 °C TC = 100 °C ID IDM 17 10 40 Avalanche Current IAS 18 Avalanche Energy L = 1mH EAS 168 Power Dissipation TC = 25 °C TC = 100 °C PD 63 25 Junction & Storage Temperature Range TJ, TSTG -55 to 150 UNITS V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Case Junction-to-Ambient 1Pulse width limited by maximum junction temperature.
SYMBOL RqJC RqJA TYPICAL MAXIMUM UNITS 2 °C / W 62.
5 REV 1.
2 1 2016/2/29 P9515BDE N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNITS MIN TYP MAX STATIC Drain-Source Breakdown ...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)