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PD632BA

Part Number	PD632BA
Manufacturer	UNIKC
Description	N-Channel MOSFET
Published	Feb 7, 2017
Detailed Description	PD632BA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 30V 3.7mΩ @VGS = 10V ID 105A TO-252 AB...
Datasheet	PD632BA PDF File

Overview

PD632BA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 30V 3.
7mΩ @VGS = 10V ID 105A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ±20 Continuous Drain Current2 Pulsed Drain Current1 TC= 25 °C TC= 100 °C ID IDM 105 66 200 Avalanche Current IAS 40 Avalanche Energy L=0.
1mH EAS 80 Power Dissipation TC= 25 °C TC= 100°C PD 73 29 Junction & Storage Temperature Range Tj, Tstg -55 to 150 UNITS V V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Case Junction-to-Ambient 1Pulse width limited by maximum junction temper...

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PD632BA N-Channel MOSFET - UNIKC

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