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PD636BA

Part Number	PD636BA
Manufacturer	UNIKC
Description	N-Channel MOSFET
Published	Feb 7, 2017
Detailed Description	PD636BA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 30V 9mΩ @VGS = 10V ID 48A TO-252 100% ...
Datasheet	PD636BA PDF File

Overview

PD636BA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 30V 9mΩ @VGS = 10V ID 48A TO-252 100% RG Test 100% UIL Test ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ±20 Continuous Drain Current2 Pulsed Drain Current1 TC= 25 °C TC= 100 °C ID IDM 48 30.
5 120 Avalanche Current IAS 20 Avalanche Energy L=0.
1mH EAS 20.
8 Power Dissipation TC= 25 °C TC= 100°C PD 37.
9 15 Junction & Storage Temperature Range Tj, Tstg -55 to 150 UNITS V V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Case Junction-to-Ambient 1Pulse width limite...

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PD636BA N-Channel MOSFET - UNIKC

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