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PD648BA

Part Number	PD648BA
Manufacturer	UNIKC
Description	N-Channel MOSFET
Published	Feb 7, 2017
Detailed Description	PD648BA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 30V 3.9mΩ @VGS = 10V ID 94A TO-252 ABS...
Datasheet	PD648BA PDF File

Overview

PD648BA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 30V 3.
9mΩ @VGS = 10V ID 94A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ±20 Continuous Drain Current2 Pulsed Drain Current1 TC = 25 °C TC = 100 °C ID IDM 94 59 170 Avalanche Current IAS 36 Avalanche Energy L =0.
1mH EAS 64 Power Dissipation TC = 25 °C TC = 100 °C PD 62.
5 25 Junction & Storage Temperature Range Tj, Tstg -55 to 150 UNITS V V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Case Junction-to-Ambient 1Pulse width limited by maximum junction ...

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PD648BA N-Channel MOSFET - UNIKC

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