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P0860ETFS

NIKO-SEM
Part Number P0860ETFS
Manufacturer NIKO-SEM
Description N-Channel MOSFET
Published Feb 9, 2017
Detailed Description NIKO-SEM N-Channel Enhancement Mode P0860ETF:TO-220F P0860ETFS:TO-220FS Field Effect Transistor Halogen-Free & Lead-...
Datasheet PDF File P0860ETFS PDF File

P0860ETFS
P0860ETFS

Overview
NIKO-SEM N-Channel Enhancement Mode P0860ETF:TO-220F P0860ETFS:TO-220FS Field Effect Transistor Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) 600V 1.
05Ω ID 8A D G S ABSOLUTE MAXIMUN RATINGS(TA=25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current2 Pulsed Drain Current1 Avalanche Current 3 Avalanche Energy3 TC = 25 °C TC = 100 °C VDS VGS ID IDM IAS EAS Power Dissipation TC = 25 °C TC = 100 °C Operating Junction & Storage Temperature Range PD Tj, Tstg 1 23 1.
GATE 2.
DRAIN 3.
SOURCE LIMITS 600 ±30 8 5 25 3.
5 61.
2 36 14 -55 to 150 UNITS V V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL Junction-to-Case RJC Junction-to-Ambient RJA 1Pulse width limited by maximum junction temperature.
2Ensure that the channel temperature does not exceed 150°C.
3VDD = 50V , L = 10mH ,starting TJ = 25°C.
MAXIMUM 3.
4 62.
5 UNITS °C / W °C / W ELEC...


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