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P9008HV

NIKO-SEM
Part Number P9008HV
Manufacturer NIKO-SEM
Description Dual N-Channel MOSFET
Published Feb 9, 2017
Detailed Description NIKO-SEM Dual N-Channel Enhancement Mode Field P9008HV Effect Transistor SOP-8 Halogen-Free & Lead-Free PRODUCT SUM...
Datasheet PDF File P9008HV PDF File

P9008HV
P9008HV

Overview
NIKO-SEM Dual N-Channel Enhancement Mode Field P9008HV Effect Transistor SOP-8 Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) 80 90mΩ ID 5A G : GATE D : DRAIN S : SOURCE ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current1 TA = 25 °C TA = 70 °C Avalanche Current Avalanche Energy L = 0.
1mH Power Dissipation TA = 25 °C TA = 70 °C Operating Junction & Storage Temperature Range VDS VGS ID IDM IAS EAS PD Tj, Tstg LIMITS 80 ±25 5 4 25 22 25 2 1.
28 -55 to 150 UNITS V V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS Junction-to-Ambient RJA 62.
5 °C / W Junction-to-Lead RJL 1Pulse width limited by maximum junction temperature.
35 °C / W ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS Drain-Source Breakdown Voltag...


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