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20N50E

ON Semiconductor
Part Number 20N50E
Manufacturer ON Semiconductor
Description MTW20N50E
Published Feb 15, 2017
Detailed Description MTW20N50E Preferred Device Power MOSFET 20 Amps, 500 Volts N−Channel TO−247 This high voltage MOSFET uses an advanced te...
Datasheet PDF File 20N50E PDF File

20N50E
20N50E

Overview
MTW20N50E Preferred Device Power MOSFET 20 Amps, 500 Volts N−Channel TO−247 This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage−blocking capability without degrading performance over time.
In addition, this advanced Power MOSFET is designed to withstand high energy in the avalanche and commutation modes.
The new energy efficient design also offers a drain−to−source diode with a fast recovery time.
Designed for high voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.
• Robust High Voltage Termination • Avalanche Energy Specified • Source−to−Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode • Diode is Characterized for Use in Bridge Circuits • IDSS and VDS(on) Specified at Elevated Temperature • Isolated Mounting Hole Reduces Mounting Hardware MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Symbol Value Drain−Source Voltage VDSS 500 Drain−Gate Voltage (RGS = 1.
0 MΩ) VDGR 500 Gate−Source Voltage − Continuous − Non−Repetitive (tp ≤ 10 ms) VGS VGSM ± 20 ± 40 Drain Current − Continuous Drain Current − Continuous @ 100°C Drain Current − Single Pulse (tp ≤ 10 µs) ID 20 ID 14.
1 IDM 60 Total Power Dissipation Derate above 25°C PD 250 2.
0 Operating and Storage Temperature Range TJ, Tstg −55 to 150 Single Pulse Drain−to−Source Avalanche Energy − Starting TJ = 25°C (VDD = 100 Vdc, VGS = 10 Vdc, IL = 20 Apk, L = 10 mH, RG = 25 Ω) Thermal Resistance − Junction to Case Thermal Resistance − Junction to Ambient Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds EAS RθJC RθJA TL 2000 0.
50 40 260 Unit Vdc Vdc Vdc Vpk Adc Apk Watts W/°C °C mJ °C/W °C http://onsemi.
com 20 AMPERES 500 VOLTS RDS(on) = 240 mΩ N−Channel D ...


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