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TC518129BFWL-10V

Toshiba
Part Number TC518129BFWL-10V
Manufacturer Toshiba
Description SILICON GATE CMOS PSEUDO STATIC RAM
Published Feb 16, 2017
Detailed Description TOSHIBA TC5l8l29BPL/BFL/BFWL/BFIL-70V/80V/lOV SILICON GATE CMOS 131,072 WORD x 8 BIT CMOS PSEUDO STATIC RAM Descript...
Datasheet PDF File TC518129BFWL-10V PDF File

TC518129BFWL-10V
TC518129BFWL-10V

Overview
TOSHIBA TC5l8l29BPL/BFL/BFWL/BFIL-70V/80V/lOV SILICON GATE CMOS 131,072 WORD x 8 BIT CMOS PSEUDO STATIC RAM Description The TC518129B-V is a 1M bit high speed CMOS pseudo static RAM organized as 131,072 words by 8 bits.
The TC518129B-V utilizes a one transistor dynamic memory cell with CMOS peripheral circuitry to provide high capacity, high speed and low power storage.
The TC518129B-V operates from a single power supply of 2.
7 - 5.
5V.
Refreshing is supported by a refresh (RFSf-i input which enables two types of refreshing - auto refresh and self refresh.
The TC518129B-V features a static RAM-like interface with a write cycle in which the input data is written into the memory cell at the rising edge of RNV thus simplifying the microprocessor interface.
A CS standby mode interface is incorporated in the TC518129B-V family, with the CE2 pin in the TC518128B-V family changed to a CS pin.
The TC518129B-V is available in a 32-pin, 0.
6 inch width plastic DIP, a small outline plastic flat...


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