DatasheetsPDF.com

TC518128BFTL-70V

Toshiba
Part Number TC518128BFTL-70V
Manufacturer Toshiba
Description SILICON GATE CMOS PSEUDO STATIC RAM
Published Feb 17, 2017
Detailed Description TOSHIBA SILICON GATE CMOS TC518l28BPL/BFL/BFWL/BFIL-70V/80V/lOV 131,072 WORD x 8 BIT CMOS PSEUDO STATIC RAM Descript...
Datasheet PDF File TC518128BFTL-70V PDF File

TC518128BFTL-70V
TC518128BFTL-70V

Overview
TOSHIBA SILICON GATE CMOS TC518l28BPL/BFL/BFWL/BFIL-70V/80V/lOV 131,072 WORD x 8 BIT CMOS PSEUDO STATIC RAM Description The TC518128B-V is a 1M bit high speed CMOS pseudo static RAM organized as 131,072 words by 8 bits.
The TC518128B-V utilizes a one transistor dynamic memory cell with CMOS peripheral circuitry to provide high capacity, high speed and low power storage.
The TC518128B-Voperates from a single power supply of 2.
7 - 5.
5V.
Refreshing is supported by a refresh (RFS~ input which enables two types of refreshing - auto refresh and self refresh.
The TC518128B-V features a static RAM-like interface with a write cycle in which the input data is written into the memory cell at the rising edge of RMI thus simplifying the microprocessor interface.
The TC518128B-V is pin-compatible with the 1M bit CMOS static RAM JEDEC standard and is available in a 32-pin, 0.
6 inch width plastic DIP, a small outline plastic flat package, and a 32-pin thin small outline plastic package (forward t...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)