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TC55B464P-12

Toshiba
Part Number TC55B464P-12
Manufacturer Toshiba
Description SILICON GATE CMOS STATIC RAM
Published Feb 20, 2017
Detailed Description TOSHIBA 1l:55~64P/J-I0/12 SILICON GATE BiCMOS 65,536 WORD x 4 BIT BiCMOS STATIC RAM Description The TC55B464P/J is a...
Datasheet PDF File TC55B464P-12 PDF File

TC55B464P-12
TC55B464P-12

Overview
TOSHIBA 1l:55~64P/J-I0/12 SILICON GATE BiCMOS 65,536 WORD x 4 BIT BiCMOS STATIC RAM Description The TC55B464P/J is a 262,144 bit high speed BiCMOS static random access memory organized as 65,536 words by 4 bits and operated from a single 5V supply.
Toshiba's BiCMOS technology and advanced circuit design enable high speed operation.
The TC55B464P/J features low power dissipation when the device is deselected using chip enable (CE).
The TC55B464P/J is suitable for use in high speed applications such as cache memory and high speed storage.
All inputs and outputs are TTL compatible.
The TC55B464P/J is available in a 300mil width, 24-pin DIP and SOJ suitable for high density surface assembly.
Features • Fast access time - TC55B464P/J-10 10ns (max.
) - TC55B464P/J-12 12ns (max.
) • Low power dissipation - Operation: - TC55B464P/J-10 140mA (max.
) - TC55B464P/J-12 140mA (max.
) - Standby: 15mA (max.
) • Single 5V power supply: 5V±10% • Fully static operation • Inputs and o...


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