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PF7N60

Fairchild Semiconductor
Part Number PF7N60
Manufacturer Fairchild Semiconductor
Description 600V N-Channel MOSFET
Published Feb 20, 2017
Detailed Description FQPF7N60 — N-Channel QFET® MOSFET FQPF7N60 N-Channel QFET® MOSFET 600 V, 4.3 A, 1 Ω Description This N-Channel enhancem...
Datasheet PDF File PF7N60 PDF File

PF7N60
PF7N60

Overview
FQPF7N60 — N-Channel QFET® MOSFET FQPF7N60 N-Channel QFET® MOSFET 600 V, 4.
3 A, 1 Ω Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology.
This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength.
These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
November 2013 Features • 4.
3 A, 600 V, RDS(on) = 1.
0 Ω (Max.
) @ VGS = 10 V, ID = 2.
2 A • Low Gate Charge (Typ.
29 nC) • Low Crss (Typ.
16 pF) • 100% Avalanche Tested D GDS TO-220F G Absolute Maximum Ratings TC = 25°C unless otherwise noted.
Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) Drain Current - Pulsed Gate-Source Vol...


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