DatasheetsPDF.com

UPD4164-3

Part Number	UPD4164-3
Manufacturer	NEC
Description	65536 x 1-BIT DYNAMIC RANDOM ACCESS MEMORY
Published	Feb 24, 2017
Detailed Description	NEe Microcomputers, Inc. 65,536 x 1 BIT DYNAMIC RANDOM ACCESS MEMORY NEe Jo&PD4164-1 ,.,. PD4164-2 J.L PD4164-3 ~rn~[m~...
Datasheet	UPD4164-3 PDF File

Overview

NEe Microcomputers, Inc.
65,536 x 1 BIT DYNAMIC RANDOM ACCESS MEMORY NEe Jo&PD4164-1 ,.
,.
PD4164-2 J.
L PD4164-3 ~rn~[m~~~illrnw DESCR IPTI ON The NEC /lPD4164 is a 65,536 words by 1 bit Dynamic N-Channel MOS RAM designed to operate from a single +5V power supply.
The negative-voltage substrate bias is internally generated - its operation is both automatic and transparent.
The /lPD4164 utilizes a double-poly-layer N-channel silicon gate process which provides high storage cell density, high performance and high reliability.
The /lPD4164 uses a single transistor dynamic storage cell and advanced dynamic circuitry throughout, including the 512 sense amplifiers, which assures that power dis...

Similar Datasheet

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)